G50-3B4NA retro-reflective NPN NO Infrared ray photoelectric switch sensor
Product Description
G50-3B4NA retro-reflective NPN NO Infrared ray photoelectric switch sensor
Product Description
Application:
| Model No. | G50-3B4NA |
| Working voltage | 10-30VDC |
| Output form | NPN transistor output，NPN with cable and reflector |
| Output state | Normally open(light entering NO) |
| Shell Material | Plastic |
| Protection grade | IP54 |
| Detection distance | 4m |
| Detection way | Retro reflective type |
Overall dimensions: (unit:mm)
Model composition and definition of infrared ray photoelectric switch:
| No | Composition | Code and definition |
| 1 | Basic form | G:Plastic housing infrared ray photoelectric switch E:Metal infrared ray photoelectric switch |
| 2 | Outward appearance code | 18,50,76······ |
| 3 | Working voltage | 2.90-250VAC 3:10-30VDC 4:12-240VDC/24~240VAC 5: Special voltage |
| 4 | Detection way | A:diffused reflection type(scattered reflection type) B:feedbace reflection type mirror(mirror reflection type) C:penetration type(correlation type) D:marking detection type G:optical fiber type |
| 5 | Detection distance | 05:5cm 10:10cm 30:30cm 101:10cm |
| 6 | Output form | N:NPN transistor output P:PNP transistor output J: Relay contact output L:AC two-wire output S:With two outputs: NPN and PNP |
| 7 | Output state | A: Normally open(light entering NO) B:Normally close(light sheltering NC) C: normally open+normally close |
| 8 | Subsidiary | T1: front delay T2: rear delay Y: oil proof T: with aviation connector I: special requirement |
G50 series photoelectric sensor switch:
| CODE | G50 | |||
| Detection distance | 30-50cm | |||
| Diffuse Type | 10-30 VDC | NPN | NO | G50-3A30NA |
| NC | G50-3A30NB | |||
| NO+NC | G50-3A30NC | |||
| PNP | NO | G50-3A30PA | ||
| 90-250 VAC | NC | G50-3A30PB | ||
| NO+NC | G50-3A30PC | |||
| SCR controllable silicon | NO | |||
| NC | ||||
| Relay output | G50-2A30JC | |||
| Detection distance | 4M | |||
| Retroreflictive | 10-30 VDC | NPN | NO | G50-3B4NA |
| NC | G50-3B4NB | |||
| NO+NC | G50-3B4NC | |||
| PNP | NO | G50-3B4PA | ||
| 90-250 VAC | NC | G50-3B4PB | ||
| NO+NC | G50-3B4PC | |||
| SCR controllable silicon | NO | |||
| NC | ||||
| Relay output | G50-2B4JC | |||
| Detection distance | 5M | |||
| Trough beam | 10-30 VDC | NPN | NO | G50-3C5NA |
| NC | G50-3C5NB | |||
| NO+NC | G50-3C5NC | |||
| PNP | NO | G50-3C5PA | ||
| 90-250 VAC | NC | G50-3C5PB | ||
| NO+NC | G50-3C5PC | |||
| SCR controllable silicon | NO | G50-2C5LA | ||
| NC | ||||
| Relay output | G50-2C5JC | |||
| DC/SCR Control output | DC:200mA AC:300mA relay:2A | |||
| DC/AC Consumption current | DC<15 mA AC<10 mA | |||
| DC/AC Response time | DC<2ms AC<20ms | |||
| Directional angle | 3°-10° | |||
| Detected object | transparent or opaque body | |||
| WoJrking envlrOnment temDerature | -25℃~+55℃ | |||
| Intensity ofillumination of working environment | Sunlight under 10000LX incandescent lamp under 3000LX | |||
| Shell materia | Plastic | |||
| Protection grade | IP54 | |||
Product Pictures