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G65 Infrared sensor Photoelectric sensor

The mechanical quantity to be measured, such as displacement, pressure change into an electrical capacitance sensor. Therefore, capacitive sensors can be divided into pole pitch change type, area change type, change the media type categories. Pole pitch change type is generally used to measure the tiny lines or due to force displacement, pressure, vibration caused by the pole pitch changes (see capacitive pressure sensor). Area change type is generally used to measure the angular displacement or larger linear displacement. Change media type commonly used in level measurement and a variety of medium temperature, density determination and humidity.

  • G65
  • YUMO
  • YM0000667

G65 Infrared ray Photoelectric Switch Sensor


   The photoelectric sensor is a sensor using a photovoltaic element as a detection element. It first converts the measured change into a change in the optical signal, and then further converts the optical signal into an electrical signal by means of the photovoltaic element. Photoelectric sensor is generally composed of light source, optical path and optoelectronic components of three parts.

      The photoelectric sensor is generally composed of a processing path and a processing element 2 part. The basic principle is based on the photoelectric effect, the measured changes into optical signal changes, and then by means of optoelectronic components to further convert non-electrical signals into electrical signals. Photoelectric effect refers to the light irradiation of an object, can be seen as a series of energy with a certain amount of photons bombardment in this object, this time the photon energy is transmitted to the electrons, and is a photon all the energy one by one Electrons are absorbed, and electrons pass the energy of the photons to pass their state, so that the object is irradiated with light to produce the corresponding electrical effect. Usually the photoelectric effect is divided into three categories: (1) in the light can make the phenomenon of electrons to escape the surface of the object known as the external photoelectric effect, such as photoelectric tube, photomultiplier tube; (2) in the light can make objects (3) under the action of light, the object produces a certain direction of the phenomenon of electromotive force known as the photovoltaic effect, such as photovoltaic cells, etc., such as photodiode.


Working Principle 

      The photoelectric sensor is controlled by converting the change in light intensity into electrical signals.

      Photoelectric sensors in general, there are three parts, they are divided into: transmitter, receiver and detection circuit.

The transmitter is aimed at the target beam, and the emitted beam is typically derived from a semiconductor light source, a light emitting diode (LED), a laser diode, and an infrared emitting diode. The beam is continuously transmitted, or the pulse width is changed. Receiver has a photodiode, photoelectric transistor, photovoltaic cells. In front of the receiver, there are optical elements such as lenses and iris. Behind it is the detection circuit, it can filter out the effective signal and the application of the signal.

      In addition, the structural components of the photoelectric switch also have a transmitting plate and an optical fiber.


Application

        With the photoelectric components for the sensor components of the photoelectric sensor, its a wide range of uses. According to the nature of the output of the photoelectric sensor can be divided into two categories: (1) to be measured into a continuous change in the photoelectric current made of photoelectric measuring instruments can be used to measure the intensity of light and the object temperature, light transmission capacity, And the surface state and other physical quantities. For example: measuring light intensity illuminometer, photoelectric pyrometer, photoelectric colorimeter and turbidity meter, to prevent the fire of the photoelectric alarm, constitute the processing of parts to be processed diameter, length, oval and surface roughness and other automatic detection devices and Instruments, the sensitive components are used optoelectronic components. Semiconductor optoelectronic components not only in the field of civilian industry has been widely used in the military has its more important position. Such as the use of lead sulfide photoresistor can be made infrared night vision, infrared camera and infrared navigation system; (2) to be converted into a constant change in the photocurrent. And various photoelectric automatic devices made of the characteristics of the "yes" or "no" electrical signal output by the photovoltaic element in the case of light or no light irradiation. The photovoltaic element is used as a switch-type photoelectric conversion element. Such as electronic computer photoelectric input device, switch-type temperature adjustment device and speed measurement digital photoelectric tachometer, etc.


Technical Parameters

OVERALL DIMENSIONS

G65 Infrared ray Photoelectric Switch Sensor



T
r
o
u
g
h

b
e
a
m


 Detection distance

1cm


10-
10
VDC


NPN

NO

G65-3E01NA

NC

G65-3E01NB

NO+NC

G65-3E01NC

PNP

NO

G65-3E01PA

 
90~
250
VAC

NC

G65-3E01PB

NO+NC

G65-3E01PC

SCR
ControHable
silicon

NO


NC


Relay output


  Control output

DC:200mA、AC:300mA

  Consumption current

DC<15mA、AC:<10mA

  C Response time

Dc<2ms、AC<20ms

  Directional angle

3。~-10。

  Detected object

transparent or opaque body

  WoJrking envlrOnment temDerature

-25℃~+55℃

  Intensity ofillumination ofworking environment

以下Sunlight under1000LX,incandescentlamp under 3000LX

  Shell materia

Metal

  Protection grade

IP64

 




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